Breakthrough in Transistor Technology: A New Era for Energy-Efficient Electronics
Researchers at the Massachusetts Institute of Technology (MIT) have developed a new transistor made from semiconducting vertical nanowires of gallium antimonide (GaSb) and indium arsenide (InAs). This innovation could lead to ultra-low-power electronics, ideal for applications such as the Internet of Things (IoT) and artificial intelligence. The new transistor uses electrons tunneling through an energy…